Pressure and temperature dependence of Zn incorporation in metalorganic chemical vapour deposition grown GaAs and AIGaAs using diethylzinc as precursor

Pressure and temperature dependence of silicon doping of GaAs using Si2H6 in metalorganic chemical vapour deposition

Application of the point-defect analysis technique to zinc doping of MOCVD indium phosphide

Epitaxial layers of p-type indium phosphide (InP) have been grown by low pressure, metal organic chemical vapour deposition (LP-MOCVD) using diethylzinc (DEZn) as the p-dopant source. Proposed zinc-associated InP point defects and experimental DEZn doping data were used to formulate a point-defect equilibrium model of the Zn doping process of MOCVD InP. The model equation is contrasted with the...

TEMPERATURE DEPENDENCE OF SILICON DOPING OF GaAs BY SiH4 AND S12H6 IN ATMOSPHERIC PRESSURE METALORGANIC CHEMICAL VAPOUR DEPOSITION

Please be advised that this information was generated on 2016-12-22 and may be subject to change.

Optical and electrical quality of InGaP grown on GaAs with low pressure metalorganic chemical vapour deposition

Doublet state of resonantly coupled AlGaAs/GaAs quantum wells grown by metalorganic chemical vapor deposition

Quantum-mechanically coupled wen systems consisting of two GaAs wells 30 A thick separated by an Alo.s GIlo.s As barrier whose thickness was varied from 12 to 40 A have been grown by metalorganic chemical vapor deposition. The photoluminescence spectra of these systems indicated the splitting of a degenerate single well state into a doublet state, a symmetrical state, and an antisymmetric state...